RB162M-60TR ROHM

Schottky Barrier Diode RB162M-60 Data Sheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 0.10.1 1.2 0.05 1.60.1 lFeatures 1) Small power mold type.(PMDU) 2) Low I R PMDU 3) High reliability lStructure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lConstruction Silicon epitaxial planar lTaping specifications (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 4.00.1 1.00.1 1.810.1 1.5MAX lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 60 V RM V 60 Reverse voltage (DC) V R 1 Average rectified forward current (*1) Io A Forward current surge peak (60Hz 1cyc) I 20 A FSM Junction temperature Tj 150 C Storage temperature Tstg -40 to +150 C (*1)Mounting on glass epoxi board Tc=90C max. lElectrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =1A Forward voltage - - 0.65 V F F Reverse current I - - 100 V =60V mA R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.C 1/4 Not Recommended for New Designs 2.60.1 3.50.2 3.50.12 3.50.05 1.750.1 0.85 8.00.2 3.71 0.08 3.710.1 3.05Data Sheet RB162M-60 1 100000 Tj=125 C Tj=150 C 10000 Tj=150 C 1000 Tj=125 C Tj=75 C 0.1 100 Tj=25 C 10 Tj=75 C Tj=25 C 1 0.01 0.1 0 200 400 600 0 20 40 60 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 560 f=1MHz Tj=25 C I =1A F n=20pcs 540 AVE:515.2mV 100 520 500 10 480 1 460 0 10 20 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 100 200 Tj=25 C Tj=25 C 190 f=1MHz V =60V R V =0V R n=20pcs 180 AVE:168.0pF n=10pcs 170 160 AVE:6.0uA 10 150 140 130 120 110 1 100 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.C 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT:I ( mA) R FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I ( mA) R