RB162VA-20TR ROHM

Data Sheet Schottky barrier Diode RB162VA-20 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 +0.1 0.17 0.05 Feature 1)Small mold type (TUMD2) 2)Low V F 3)High reliability TUMD2 Structure Structure Silicon epitaxial planer +0.2 0.6 0.1 Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 25 V RM Reverse voltage (DC) 20 V V R Average rectified forward current Io 1.0 A Forward current surge peak (60Hz/1cyc) I 5.0 A FSM Junction temperature Tj 125 C Storage temperature 40 to 125 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - 0.36 0.4 V I =1.0A F F Reverse current I - 0.3 1.2 mA V =20V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/3 Not Recommended for New Designs 2.0 0.8 0.5Data Sheet RB162VA-20 Electrical characteristics curves 1000 100000 10 f=1MHz Ta=125 C Ta=125 C 10000 1 100 Ta=75 C 1000 Ta=75C 0.1 100 Ta=25 C 10 Ta=25 C 0.01 10 Ta=-25 C Ta=-25 C 1 0.001 1 010 20 0.00.10.20.30.40.5 0 5 10 15 20 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R R FORWARD VOLTAGE : V (V) F V -I CHARACTERISTICS V -Ct CHARACTERISTICS R R R V -I CHARACTERISTICS F F 400 450 180 Ta=25 C Ta=25 C Ta=25C 178 V =1.0A V =20V F R f=1MHz 380 176 n=30pcs n=30pcs V =0V R 400 n=30pcs 174 360 172 350 170 340 168 166 300 320 AVE : 354 A 164 AVE : 371mV 162 AVE:172pF 250 300 160 I DISPERSION MAP V DISPERSION MAP R F Ct DISPERSION MAP 30 30 30 Ta=25 C 1cyc Ifsm 25 25 25 I =0.5A Ifsm F =1A I R 8.3ms 8.3ms Irr=0.25*I 8.3ms R 20 20 20 n=10pcs 1cyc 15 15 15 10 10 10 5 5 5 AVE : 7.70ns AVE : 14.6A 0 0 0 110 100 NUMBER OF CYCLES I DISRESION MAP FSM trr DISPERSION MAP I -CYCLE CHARACTERISTICS FSM On glass-epoxy board 30 0.3 1000 IM=10mA I =0.1A F 25 Ifsm t 1ms time Rth(j-a) 20 0.2 300 s D=1/2 15 100 DC Sin(=180) 10 Rth(j-c) 0.1 5 0 10 0 1 10 100 0.001 0.01 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED TIME : t(ms) TIME : t(s) FORWARD CURRENT : Io(A) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FORWARD VOLTAGE : V (mV) F F FORWARD CURRENT : I (A) FSM FORWARD CURRENT : I (A) FSM TRANSIENT REVERSE CURRENT : I (A) R REVERSE CURRENT : I (A) R THAERMAL IMPEDANCE : Rth ( C/W) REVERSE RECOVERY TIME : trr(ns) PEAK SURGE CAPACITANCE BETWEEN TERMINALS : FORWARD POWER CAPACITANCE BETWEEN TERMINALS : FORWARD CURRENT : I (A) Ct(pF) FSM DISSIPATION : Pf(W) Ct(pF)