RB205T-60 ROHM

Data Sheet Schottky barrier diode RB205T-60 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability 205 6 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 60 V RM Reverse voltage (DC) V 60 V R 15 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.58 V I =7.5A F F I Reverse current - - 600 A V =60V R R Thermal impedance -- 2 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D Not Recommended for New DesignsRB205T-60 Data Sheet Electrical characteristic curves Ta=150C 10 10000 100000 Ta=150 C f=1MHz Ta=125 C 10000 Ta=125 C Ta=25 C Ta=75 C 1000 1000 1 Ta=-25C Ta=75C 100 Ta=25 C 100 10 Ta=-25C 0.1 1 10 0.1 1 0.01 0.01 0 102030 0 100 200 300 400 500 600 700 0 10203040 50 60 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R REVERSE VOLTAGE : STICS V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 560 200 1350 Ta=25 C Ta=25 C 180 1340 I =7.5A Ta=25 C F V =60V R 550 f=1MHz n=30pcs 160 n=30pcs 1330 V =0V R 140 1320 n=10pcs 540 120 1310 100 1300 530 80 1290 60 AVE:537.0mV 1280 520 40 1270 AVE:1290.5pF 20 1260 AVE:40.6uA 510 0 1250 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 30 1000 Ta=25C Ifsm Ifsm 1cyc 250 25 I =0.5A F I =1A 8.3ms 8.3ms R 8.3ms 200 Irr=0.25*I 100 1cyc 20 R n=10pcs 150 15 100 10 10 AVE:168.0A 50 AVE:16.0ns 5 0 1 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 20 100 Mounted on epoxy board I =7.5A F IM=100mA Ifsm t time D=1/2 DC 300us Rth(j-a) 10 1ms Sin( 180) 100 10 Rth(j-c) 1 10 0 0.1 1 10 100 0 5 10 15 20 25 0.001 0.01 0.1 1 10 100 1000 TIME : t(ms) TIME : t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F F FORWARD CURRENT:I (A) FSM FORWARD CURRENT:I (A) FSM REVERSE CURRENT:I (uA) TRANSIENT R REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)