RB531ES-30T15R ROHM

E Schottky Barrier Diode RB531ES-30 Datasheet Application Dimensions (Unit : mm) Land Size Figure (Unit : mm) 0.31 General rectification Features 1) Small silicon package 0 0.030 (SMD0603) 0.2800.010 SMD0603 0.260 0.010 2) High Accuracy Manufacturing 0.300 0.010 Dimension tolerance10m Cathode Structure DSN0603-2(SMD0603) Low V 3) F Anode Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 30 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 30 V R Glass epoxy board mounted, 60Hz half sin wave, I Average forward rectified current 100 mA o resistive load 60Hz half sin wave, one cycle, I Non-repetitive forward current surge peak 500 mA FSM non-repetitive at T =25C a Operating junction temperature T - 150 C j T Storage temperature - 40 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =10mA - 270 300 mV F F1 Forward voltage V I =100mA - 420 500 mV F2 F V =10V I -- 7 A R1 R Reverse current V =30V I -- 50 R A R2 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.12 - Rev.A 1/4 Not Recommended for New Designs 0.380 0.010 0.180 0.010 0.600 0.010 0.23 0.38Data Sheet RB531ES-30 Electrical Characteristic Curves 10000 1000 T = 150 C j 1000 T = 75 C j T = 125 C j 100 100 T = 150 C j T = 25 C j 10 T = 125 C j 1 10 T = 25 C j T = 75 C j T = 25 C 0.1 j T = 25 C j 1 0.01 0 100 200 300 400 500 600 700 800 010 20 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 400 T = 25 C T=25 C j j f = 1MHz I =10mA F 350 n=30pcs 300 Ave. : 266.7mV 10 250 200 150 1 100 0 102030 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.12 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS : C (pF) t REVERSE CURRENT : I ( A) FORWARD VOLTAGE : V (mV) R F