RB751V-40TE-17 ROHM

RB751V-40 Diodes Schottky barrier diode RB751V-40 z Applications z External dimensions (Unit : mm) z Land size figure Low current rectification 1.250.1 0.10.1 0.05 0.9MIN. z Features 1) Ultra small mold type. (UMD2) 2) Low VF 3) High reliability UMD2 z Construction z Structure 0.70.2 0.30.05 0.1 Silicon epitaxial planar ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 40 V RM Reverse voltage (DC) 30 V V R Average rectified forward current 30 Io m A Forward current surge peak 60Hz 1cyc I 200 mA FSM Junction tem perature Tj 125 Storage tem perature -40 to +125 Tstg z Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V -- 0.37 V I =1mA F F Reverse current I -- 0.5 A V =30V R R Capacitance between term inal Ct - 2 - pF V =1V , f=1MHz R Rev.B 1/3 Not Recommended for New Designs 1.70.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 0.8MIN. 2.80.1 2.1RB751V-40 Diodes z Electrical characteristic curves 10 100 1000 Ta=125 Ta=125 f=1MHz 100 10 Ta=75 Ta=75 10 1 Ta=25 1 1 Ta=-25 0.1 Ta=25 Ta=-25 0.1 0.01 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 102030 0 102030 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS VF 10 1000 300 Ta=25 900 9 Ta=25 Ta=25 VR=30V IF=1mA 800 8 290 f=1MHz n=30pcs n=30pcs VR=1V 700 7 n=10pcs 600 6 280 500 5 400 270 4 AVE:1.97pF 300 3 260 200 2 AVE:267.4mV 100 1 AVE:185.5nA 250 0 0 VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 9 Ifsm Ifsm 1cyc Ifsm 8 15 t 15 8.3ms 8.3ms 7 8.3ms 1cyc 6 10 10 5 4 AVE:7.30A 3 5 5 2 1 0 0 0 1 10 100 1 10 100 NUMBER OF CYCLES TIME:t(ms) IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS 0.04 0.003 1000 Rth(j-a) Rth(j-c) 0.03 D=1/2 0.002 100 Sin(180) 0.02 D=1/2 Mounted on epoxy board DC IM=10mA IF=100mA DC 0.001 10 Sin(180) 0.01 time 1ms 300us 0.00 0 1 0.00 0.01 0.02 0.03 0.04 0.05 0.001 0.1 10 1000 010 20 30 TIME:t(s) AVERAGE RECTIFIED Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) FORWARD CURRENT Io(A) VR-P CHARACTERISTICS R Io-Pf CHARACTERISTICS Rev.B 2/3 Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:VF(mV) TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER REVERSE CURRENT:IR(uA) DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) REVERSE POWER PEAK SURGE DISSIPATION:P (W) R CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF)