RBE1VAM20ATR ROHM

RBE1VAM20A Schottky Barrier Diode Data sheet Outline V 20 V R I 1 A o I 3 A FSM Features Inner Circuit High reliability Small mold type Super low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial Taping Code TR Marking 5 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 20 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 1 A o T =70 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 3 A FSM one cycleT =25 a (1) T Junction temperature - 125 j T Storage temperature - -40 125 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =1A - - 0.53 V F F Reverse current I V =20V - - 200 A R R Attention www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001RBE1VAM20A Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001