Product Information

RBQ10NS65AFHTL

RBQ10NS65AFHTL electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 65V Vr 10A Io SBD TO-263S(D2PAK) 5A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.476 ea
Line Total: USD 1.48

960 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
960 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 1.2679
10 : USD 1.1592
1000 : USD 0.5543
2000 : USD 0.5216
5000 : USD 0.4975
10000 : USD 0.4746
25000 : USD 0.4734

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Case Style
No Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Additional Infomation About Product

RBQ10NS65AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 65 V R I 10 A o I 50 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ10NS65A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 65 V RM Reverse voltage V Reverse direct voltage 65 V R 60Hz half sin waveformresistive load Average rectified forward current I 10 A o I /2 per diodeT =130Max. o c 60Hz half sin waveform Peak forward surge current I 50 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBQ10NS65AFH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =5A - 0.63 0.69 V F F I V =60V - 5 40 A R1 R (1) Reverse current I V =65V - 10 70 A R2 R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 3.0 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 1.9 /W (1) (3) R Thermal Resistance (Junction to ambient) JA - - 55 /W Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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