Product Information

RBR3L40BTE25

RBR3L40BTE25 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers Diode, Rectifier FRD 40V-VR 3A-IO Single
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

209: USD 0.4561 ea
Line Total: USD 95.32

1455 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 209  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1455 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 209
Multiples : 1
209 : USD 0.4561
250 : USD 0.4469

232 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 209
Multiples : 1
209 : USD 0.4993

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

RBR3L40B Schottky Barrier Diode Data sheet Outline V 40 V R I 3 A o I 40 A FSM Features Inner Circuit High reliability Small power mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Structure Quantity(pcs) 1500 Silicon epitaxial planar Taping Code TE25 Marking A5 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 40 V RM V Reverse voltage Reverse direct voltage 40 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 3 A o T =70 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 40 A FSM one cycleT =25 a (1) T Junction temperature - 150 j T Storage temperature - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =3A - - 0.62 V F F Reverse current I V =40V - - 80 A R R Attention www.rohm.com 1/5 2016- ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002RBR3L40B Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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