RCJ120N25TL ROHM

RCJ120N25TL electronic component of ROHM
RCJ120N25TL ROHM
RCJ120N25TL MOSFETs
RCJ120N25TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RCJ120N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ120N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RCJ120N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 250V 12A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ120N25TL Datasheet (PDF)
Price (USD)
27: USD 0.9299 ea
Line Total: USD 25.11 
Availability : 0
  
QtyUnit Price
27$ 0.9299

Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.9459
2000$ 0.9078
5000$ 0.9066


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 78
Multiples : 1
QtyUnit Price
78$ 1.4891


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 27
Multiples : 1
QtyUnit Price
27$ 0.9299


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 26
Multiples : 26
QtyUnit Price
26$ 0.9761

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
Continuous Drain Current
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCJ120N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ120N25TL and other electronic components in the MOSFETs category and beyond.

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RCJ120N25 Nch 250V 12A Power MOSFET Datasheet Outline (2) V 250V DSS LPT(S) (SC-83) R (Max.) 235m DS(on) I 12A D (1) P 107W (3) D Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ120N25 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C I 6.5 A c D *2 Pulsed drain current A I 48 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 10.5 mJ E AS *3 Avalanche current I 6.0 A AR T = 25C P 107 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCJ120N25 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.16 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current -- 10 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS (th) DS D V = 10V, I = 6.0A - 180 235 GS D Static drain - source *5 V = 10V, I = 6.0A R m GS D DS(on) on - state resistance - 340 480 T = 125C j Forward transfer admittance g V = 10V, I = 6.0A 3.25 6.50 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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