Product Information

RCJ200N20TL

Hot RCJ200N20TL electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET 10V DRIVE N-Ch MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

52: USD 0.7309 ea
Line Total: USD 38.01

834 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 52  Multiples: 1
Pack Size: 1
Availability Price Quantity
1812 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 2.5875
10 : USD 2.1965
100 : USD 1.8055
250 : USD 1.702
500 : USD 1.5525
1000 : USD 1.288
5000 : USD 1.2535
10000 : USD 1.242

834 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 52
Multiples : 1
52 : USD 0.7309
100 : USD 0.7135

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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RCJ200N20 Nch 200V 20A Power MOSFET Datasheet Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 130m DS(on) I 20A D (1) P 106W (3) D Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate 1 (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ200N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 20 A c D Continuous drain current *1 T = 100C I 10.9 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 32.3 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 106 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCJ200N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.17 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -25 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 10A - 100 130 GS D Static drain - source *5 V = 10V, I = 10A R m GS D DS(on) on - state resistance - 220 310 T = 125C j g V = 10V, I = 10A Forward transfer admittance 4.9 9.8 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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