Product Information

RCX051N25

RCX051N25 electronic component of ROHM

Datasheet
Trans MOSFET N-CH 250V 5A Automotive 3-Pin(3+Tab) TO-220FM Bulk

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.219 ea
Line Total: USD 1.22

451 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
451 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.219
10 : USD 1.0522
100 : USD 0.8843
500 : USD 0.6946
1000 : USD 0.5669
2500 : USD 0.5612
5000 : USD 0.5612
10000 : USD 0.5509
25000 : USD 0.5485

485 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 132
Multiples : 1
132 : USD 0.7294

     
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RCX051N25 Nch 250V 5.0A Power MOSFET Datasheet l Outline V 250V DSS TO-220FM R (Max.) 1360mW DS(on) I 5.0A D (3) P (2) 30W D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX051N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 5.0 A c D Continuous drain current *1 T = 100C I 2.7 A c D *2 Pulsed drain current I 20 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 1.82 mJ AS *3 Avalanche current I 2.5 A AR T = 25C P 30 W c D Power dissipation T = 25C P 2.23 W a D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX051N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 4.16 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current - - 10 mA DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.5 - 5.5 V GS (th) DS D V = 10V, I = 2.5A - 970 1360 GS D Static drain - source *4 V = 10V, I = 2.5A R mW GS D DS(on) on - state resistance - 2100 2950 T = 125C j Forward transfer admittance g V = 10V, I = 2.5A 1.25 2.50 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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