RCX200N20 Nch 200V 20A Power MOSFET Datasheet Outline V 200V DSS TO-220FM R (Max.) 130m DS(on) I 20A D (3) P 48W (2) D (1) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. 1 (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX200N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 20 A c D Continuous drain current *1 T = 100C I 10.8 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 32.3 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 48 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCX200N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 2.57 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -25 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 10A - 100 130 GS D Static drain - source *4 V = 10V, I = 10A R m GS D DS(on) on - state resistance - 220 310 T = 125C j g V = 10V, I = 10A Forward transfer admittance 4.9 9.8 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12