RCX450N20 ROHM

RCX450N20 electronic component of ROHM
RCX450N20 ROHM
RCX450N20 MOSFETs
RCX450N20  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RCX450N20 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCX450N20 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RCX450N20
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RCX450N20 Datasheet (PDF)
Price (USD)
1: USD 3.6875 ea
Line Total: USD 3.69 
Availability : 323
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 3.6875
10$ 2.4725
100$ 1.848
500$ 1.771
1000$ 1.496

Availability 323
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.6875
10$ 2.4725
100$ 1.848
500$ 1.771
1000$ 1.496


Availability 113
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 58
Multiples : 1
QtyUnit Price
58$ 4.524
81$ 3.224
100$ 3.159


Availability 209
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 104
Multiples : 1
QtyUnit Price
104$ 2.5099
108$ 2.4142
112$ 2.3323

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temp Range
Pin Count
Number Of Elements
Continuous Drain Current
Operating Temperature Classification
Drain-Source On-Volt
Power Dissipation
Rad Hardened
Polarity
Type
Gate-Source Voltage Max
Mounting
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCX450N20 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX450N20 and other electronic components in the MOSFETs category and beyond.

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RCX450N20 Nch 200V 45A Power MOSFET Datasheet l Outline V 200V DSS TO-220FM R (Max.) 55mW DS(on) I 45A D (3) (2) P 40W (1) D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX450N20 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 45 A c D Continuous drain current *1 T = 100C A I 24.4 c D *2 Pulsed drain current I 180 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 160 mJ AS *3 Avalanche current I 22.5 A AS T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W a D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX450N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.12 C/W thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1.0mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 1.0 T = 25C j Zero gate voltage I mA DSS drain current V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 22.5A - 42 55 GS D Static drain - source *4 V = 10V, I = 22.5A R mW GS D DS(on) on - state resistance - 95 125 T = 125C j g V = 10V, I = 22.5A Forward transfer admittance 17 34 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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