RCX511N25 Nch 250V 51A Power MOSFET Datasheet Outline V 250V DSS TO-220FM R (Max.) 65m DS(on) I 51A D (3) P (2) 84W D (1) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX511N25 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 51 A c D Continuous drain current *1 T = 100C I 27.7 A c D *2 Pulsed drain current 204 A I D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 197.9 mJ E AS *3 Avalanche current I 25.5 A AR T = 25C P 84 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/12Data Sheet RCX511N25 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.48 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current -- 10 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V = 10V, I = 1mA Gate threshold voltage V 3.0 - 5.0 V GS (th) DS D V = 10V, I = 25.5A -48 65 GS D Static drain - source *4 V = 10V, I = 25.5A R m GS D DS(on) on - state resistance - 110 155 T = 125C j Forward transfer admittance g V = 10V, I = 25.5A 15 30 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/12