RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P = 4.3W (typ) O Gain: G = 13.3dB (typ) P Drain efficiency: = 70% (typ) D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 16 V DSS Gain-source voltage V 3 V GSS Drain current I 2 A D PW-Mini Power dissipation P (Note 1) 7 W D JEDEC Channel temperature T 150 C ch JEITA SC-62 Storage temperature range T 45 to 150 C stg TOSHIBA 2-5K1D Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.05 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C (When mounted on a 0.4 mm glass epoxy PCB with heat sink) Marking Part No. (or abbreviation code) 1. Gate 2. Source 3. Drain Lot No. 1 23 Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. Start of commercial production 2009-12 1 2014-03-01 RFM04U6P Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain cut-off current I V = 10 V, V = 0 V 10 A DSS DS GS Gate-source leakage current I V = 3 V 5 A GSS GS Threshold voltage V V = 6.0 V, I = 0.5mA 0.2 0.7 1.2 V th DS D Output power P 3.5 4.3 W V = 6.0 V, O DS I = 500 mA (V = adjust), idle GS Drain efficiency 55 70 % D f = 470 MHz, P = 200 mW, i Power gain G Z = Z = 50 12.4 13.3 dB P G L V = 6.0 V, DS P = 4 W(P = adjust), O i Load mismatch No degradation I = 500 mA (V = adjust), idle GS f = 470 MHz, VSWR LOAD 20:1 all phase Note 2: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 470 MHz, V = 6.0 V, I = 500 mA, P = 0.2 W) DS idle i C5 C6 P P i O C4 C1 L1 R2 L2 C2 C3 Z = 50 Z = 50 G L C7 C8 C9 R1 V V GS DS C1: 20 pF L1: 0.6 mm enamel wire, 5.5ID, 5T R1: 6.8 k C2: 8 pF L2: 0.6 mm enamel wire, 5.5ID, 7T R2: 56 C3: 18 pF C4: 1 pF Line: 2mm C5: 2200 pF C6: 2200 pF C7: 10000 pF C8: 2200 pF C9: 10000 pF 2 2014-03-01