RD3P200SNTL1 ROHM

RD3P200SN Datasheet Nch 100V 20A Power MOSFET llOutline V 100V DSS DPAK R (Max.) 46m DS(on) TO-252 I 20A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 TL Taping code TL1 Marking RD3P200SN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS *1 I Continuous drain current 20 A D *2 I Pulsed drain current 80 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 72 mJ AS *4 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.005 RD3P200SN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 20A - 33 46 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 20A - 36 50 GS D R Gate resistance f = 1MHz, open drain - 4.9 - G Forward Transfer *5 Y V = 10V, I = 20A 15 - - S fs DS D Admittance www.rohm.com 2/12 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.