RD3U080CN Datasheet Nch 250V 8A Power MOSFET llOutline V 250V DSS DPAK R (Max.) 300m DS(on) TO-252 I 8A D P 85W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching application Basic ordering unit (pcs) 2500 Taping code TL1 Marking RD3U080CN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 8 A c D Continuous drain current *1 T = 100C I 4.2 A c D *2 I Pulsed drain current 32 A DP V Gate - Source voltage 30 V GSS *3 E Avalanche energy, single pulse 4.67 mJ AS *3 I Avalanche current, single pulse 4 A AS Power dissipation (T = 25C) P 85 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170929 - Rev.002 RD3U080CN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.46 /W thJC T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 250 - - V (BR)DSS GS D voltage V = 250V, V = 0V DS GS Zero gate voltage I A DSS drain current T = 25C - - 10 j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS(th) DS D Static drain - source *4 R V = 10V, I = 4A - 225 300 m DS(on) GS D on - state resistance Forward Transfer *4 Y V = 10V, I = 4A 2.7 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 500H, V = 50V, R = 25, starting T = 25C DD G j *4 Pulsed www.rohm.com 2/11 20170929 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.