Product Information

RF05VAM1STR

RF05VAM1STR electronic component of ROHM

Datasheet
ROHM Semiconductor Diodes - General Purpose, Power, Switching
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

53914 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
412 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5
5 : USD 0.1272
50 : USD 0.1042
150 : USD 0.0926
500 : USD 0.0841
3000 : USD 0.0772
6000 : USD 0.0737

53914 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.3692
10 : USD 0.2001
100 : USD 0.0989
1000 : USD 0.0816
3000 : USD 0.0655
9000 : USD 0.0587
24000 : USD 0.0563
45000 : USD 0.0529
99000 : USD 0.0517

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Frequency Range
Operating Temperature Range
Product
Brand
Switch Configuration
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RF05VAM1S Data Sheet lSerise lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.170.1 Standard Fast Recovery 0.05 1.40.1 1.30.05 1.1 lApplication High frequency rectification TUMD2M lFeatures Cathode 1) Small mold type (TUMD2M) lStructure 0.80.05 0.60.2 2) High speed switching 0.1 ROHM : TUMD2M dot (year week factory) + day 3) Low forward voltage Anode lTaping Dimensions (Unit : mm) lConstruction Silicon epitaxial planar type lAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 100 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 100 V R On glass epoxy substrate I Average current 0.5 A o 60Hz half sin wave , Resistive load 60Hz half sin wave ,Non-repetitive at T =25C Non-repetitive forward surge current I 6 j A FSM Operating junction temperature T - 150 C j T Storage temperature - -55 to +150 C stg lElectrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.5A Forward voltage - 0.82 0.98 V F F I V =100V Reverse current - 0.01 10 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to lead - - 30 C / W th(j-l) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.09 - Rev.A 1/4 2.00.1 1.90.1 2.50.2 0.8 0.5 2.0 Data Sheet RF05VAM1S lElectrical characteristic curves 10 1000 T = 150 C T = 125 C j j 1 100 T = 75 C j T = 150 C j 10 0.1 T = 125 C j T = 25 C j T = 75 C 0.01 j 1 T = 25 C j 0.001 0.1 0 200 400 600 800 1000 1200 1400 0 20 40 60 80 100 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 10 10 1 T = 25 C j 1 0.1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.09 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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