RFN6BM2DFHTL ROHM

RFN6BM2DFHTL electronic component of ROHM
RFN6BM2DFHTL ROHM
RFN6BM2DFHTL Diodes - General Purpose, Power, Switching
RFN6BM2DFHTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFN6BM2DFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN6BM2DFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFN6BM2DFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Recovery Diode 200V TO-252 6A Io 0.9V Vf
Datasheet: RFN6BM2DFHTL Datasheet (PDF)
Price (USD)
1: USD 1.1642 ea
Line Total: USD 1.16 
Availability : 2196
  
Ship by Fri. 08 Aug to Tue. 12 Aug
QtyUnit Price
1$ 1.1642
10$ 0.8669
100$ 0.6815
500$ 0.5532
1000$ 0.5036
2500$ 0.4596
5000$ 0.4413

Availability 2196
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1642
10$ 0.8669
100$ 0.6815
500$ 0.5532
1000$ 0.5036
2500$ 0.4596
5000$ 0.4413

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN6BM2DFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN6BM2DFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN6BM2DFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Features Cathode Cathode common dual type 1) Structure ROHM : TO-252 2) Low switching loss JEITA : SC-63 1 3) High current overload capacity : Manufacture Date Anode Anode Taping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 1.550.1 0.40.1 Construction 0 Silicon epitaxial planar type TL 33.0.00.01.1 6.80.1 8.00.1 2.70.2 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 200 V R 60Hz half sin wave , Resistive load, T =106C Average rectified foward current I c 6 A o 1/2Io per diode 60Hz half sin wave, I Forward current surge peak 40 A FSM Non-repetitive at Tj=25C, per diode Operating junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C, per diode) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =3A - 0.90 0.98 V F F I V =200V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R R Thermal resistance Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0Data Sheet RFN6BM2DFH Electrical Characteristic Curves 100 10000 T = 150 C T = 125 C j j 1000 10 T = 75 C j 100 T = 150 C j 1 T = 125 C 10 j T = 25 C j T = 75 C 0.1 j 1 T = 25 C per diode per diode j 0.01 0.1 0 500 1000 1500 2000 0 50 100 150 200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz T = 25 C I a FSM 8.3ms 8.3ms per diode 1cyc. 100 100 10 10 T = 25 C j per diode 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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