RFV8BM6SFHTL ROHM

RFV8BM6SFHTL electronic component of ROHM
RFV8BM6SFHTL ROHM
RFV8BM6SFHTL Diodes - General Purpose, Power, Switching
RFV8BM6SFHTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFV8BM6SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFV8BM6SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFV8BM6SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose Power Switching 600V VR 8A IO TO-252DPAK; TO-252
Datasheet: RFV8BM6SFHTL Datasheet (PDF)
Price (USD)
1: USD 1.5625 ea
Line Total: USD 1.56 
Availability : 3247
  
Ship by Fri. 07 Nov to Tue. 11 Nov
QtyUnit Price
1$ 1.5625
10$ 0.9996
100$ 0.8184
500$ 0.6886
1000$ 0.6457
2500$ 0.6006
5000$ 0.5775
25000$ 0.5764

Availability 3247
Ship by Fri. 07 Nov to Tue. 11 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5625
10$ 0.9996
100$ 0.8184
500$ 0.6886
1000$ 0.6457
2500$ 0.6006
5000$ 0.5775
25000$ 0.5764

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFV8BM6SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFV8BM6SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFV8BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Fast Recovery Applications 1 General rectification For PFC TO-252 (CCM : Continuous Current Mode) Cathode Structure ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Features Open Anode 1) Hyper fast recovery Taping Dimensions (Unit : mm) / Hard recovery type 2) Ultra low switching loss High current overload capacity 3) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Reverse voltage Direct voltage 600 V R Average rectified foward current I 60Hz half sin wave , Resistive load T =50C 8 A c o I 60Hz half sin wave, Non-repetitive at T=25C 100 Forward current surge peak j A FSM Operating junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit T=25C 1.6 2.3 2.8 V j V I =8A Forward voltage F F T=125C j -1.55- V T=25C -0.03 10 j A I V =600V Reverse current R R T=125C j - 5 200 A I =0.5A, I =1A, Irr=0.25I -15 25 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=-200A/ s -25 45 ns F R F I I =8A,V =400V Reverse recovery current F R -5.5 - A Rp T=125C j dI /dt= 200A/ s Reverse recovery charges Qrr - 150 - nC F I =8A, dI /dt= 100A/ s, Forward recovery time tfr - 125 - ns F F V V =1.1V Forward recovery voltage -4.5 - V Fp FR Fmax R Junction to ambient - - 12 C / W th(j-a) Thermal resistance R Junction to case -- 4.5 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 1/5Datasheet RFV8BM6SFH Electrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j T = 150 C j 1 T = 125 C j 100 T = 25 C T = 75 C j j 0.1 10 T = 25 C j 1 0.01 0 1000 2000 3000 4000 5000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 1 10 110 100 0 5 10 15 20 25 30 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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