RFVS8TJ6SGC9 ROHM

RFVS8TJ6SGC9 electronic component of ROHM
RFVS8TJ6SGC9 ROHM
RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching
RFVS8TJ6SGC9  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFVS8TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 8A Io Recovery Diode
Datasheet: RFVS8TJ6SGC9 Datasheet (PDF)
Price (USD)
1: USD 1.586 ea
Line Total: USD 1.59 
Availability : 65
  
Ship by Wed. 20 Aug to Mon. 25 Aug
QtyUnit Price
1$ 1.586
10$ 1.2384
30$ 0.784
100$ 0.5604
500$ 0.4953
1000$ 0.4655

Availability 65
Ship by Wed. 20 Aug to Mon. 25 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.586
10$ 1.2384
30$ 0.784
100$ 0.5604
500$ 0.4953
1000$ 0.4655


Availability 905
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.675
10$ 1.1292
100$ 0.7865
500$ 0.6468
1000$ 0.6138
2000$ 0.5753
5000$ 0.5566
10000$ 0.5555

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFVS8TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFVS8TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFVS8TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure f3.10.1 4.50.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Cathode Anode RFVS8 (CCM : Continuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 Hyper fast recovery / Hard recovery type 1) 1.40.2 2) Ultra low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R T =60C I 60Hz half sin wave , resistive load Average current c 8 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 60 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 1.6 2.5 3.0 V Forward voltage V I =8A F F T =125C j - 1.8 - V T =25C j - 0.03 10 mA I V =600V Reverse current R R T =125C j - 5 200 mA I =0.5A, I =1A, Irr=0.25I - 12 20 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=-200A/ ms - 20 40 ns F R F I =8A, V =400V Reverse recovery current I - 5.0 - A F R Rp T =125C j Reverse recovery charges Qrr dI /dt= -200A/ ms - 145 - nC F I =8A, dI /dt=100A/ ms, Forward recovery time tfr - 110 - ns F F V V =1.1xV Forward recovery voltage - 4.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 10 C/W th Thermal resistance R (j-c) Junction to case - - 3.5 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFVS8TJ6S lElectrical Characteristic Curves 100000 100 T = 125 C T = 150 C j j 10000 10 T = 150 C j 1000 T = 75 C j 1 T = 125 C j 100 T = 25 C j T = 75 C j 0.1 10 T = 25 C j 1 0.01 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 T = 25 C f = 1MHz j T = 25 C a 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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