Product Information

RGTH00TK65DGC11

RGTH00TK65DGC11 electronic component of ROHM

Datasheet
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.7275 ea
Line Total: USD 6.73

404 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
404 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 6.9411
10 : USD 5.9444
25 : USD 5.1732
100 : USD 5.0664
250 : USD 4.6986
900 : USD 4.2596

     
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RGTH00TK65D 650V 50A Field Stop Trench IGBT Data Sheet lOutline TO-3PFM V 650V CES I 21A C(100C) V 1.6V I =50A CE(sat) (Typ.) C P 72W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching (1) Gate (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH00TK65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 35 A C C Collector Current T = 100C I 21 A C C *1 Pulsed Collector Current 200 A I CP T = 25C I 34 A C F Diode Forward Current T = 100C I 19 A C F *1 Diode Pulsed Forward Current 200 A I FP T = 25C P 72 W C D Power Dissipation T = 100C P 36 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/11Data Sheet RGTH00TK65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.07 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.09 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 34.7mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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