Product Information

RGTH00TS65GC11

RGTH00TS65GC11 electronic component of ROHM

Datasheet
ROHM Semiconductor IGBT Transistors

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.481 ea
Line Total: USD 5.48

433 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
421 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 4.439
10 : USD 3.7835
25 : USD 3.5765
100 : USD 3.197
250 : USD 3.013
2700 : USD 2.53
5400 : USD 2.4265

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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RGTH00TS65 650V 50A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 50A C(100C) V 1.6V CE(sat) (Typ.) P 277W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Power Conditioner Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 Packing code C11 RGTH00TS65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 85 A C C Collector Current T = 100C I 50 A C C *1 Pulsed Collector Current I 200 A CP T = 25C P 277 W C D Power Dissipation T = 100C P 138 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/9Data Sheet RGTH00TS65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.54 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V -- 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 34.7mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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