RHK003N06FRA Datasheet Nch 60V 300mA Small Signal MOSFET llOutline SOT-346 V 60V DSS SC-59 R (Max.) 1.0 DS(on) SMT3 I 300mA D P 200mW D llFeatures llInner circuit 1) Very fast switching 2) Pb-free lead plating RoHS compliant. 3) AEC-Q101 Qualified llApplication llPackaging specifications Embossed Switching circuits Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code T146 Marking RKS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 300 mA D *1 I Pulsed drain current 1.2 A DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 200 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160915 - Rev.001 RHK003N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 66.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.0 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 300mA - 0.7 1.0 GS D Static drain - source *3 R DS(on) on - state resistance V = 4V, I = 300mA - 1.1 1.5 GS D Forward Transfer *3 Y V = 10V, I = 300mA 200 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160915 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.