RHK005N03FRAT146 ROHM

RHK005N03FRA Datasheet Nch 30V 500mA Small Signal MOSFET llOutline SOT-346 V 30V DSS SC-59 R (Max.) 550m DS(on) SMT3 I 500mA D P 200mW D llInner circuit llFeatures 1) Low on-resistance 2) 4V drive 3) Pb-free lead plating RoHS compliant. 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code T146 Marking KU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 500 mA D *1 I Pulsed drain current 2.0 A DP V Gate - Source voltage 20 V GSS *2 P Power dissipation 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160905 - Rev.001 RHK005N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 37.6 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 500mA - 350 550 GS D Static drain - source *3 R V = 4.5V, I = 500mA - 510 720 m DS(on) GS D on - state resistance V = 4V, I = 500mA - 600 840 GS D Forward Transfer *3 Y V = 10V, I = 500mA 500 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.