Product Information

RP1E100RPTR

RP1E100RPTR electronic component of ROHM

Datasheet
Trans MOSFET P-CH 30V 10A 6-Pin MPT T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12: USD 1.6601 ea
Line Total: USD 19.92

0 - Global Stock
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 12
Multiples : 1
12 : USD 1.6601

     
Manufacturer
Product Category
Packaging
Channel Mode
Deleted
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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4V Drive Pch MOSFET RP1E100RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) 3) 4V drive. Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 1000 RP1E100RP 2 (1) Source (2) Source 1 (3) Gate Absolute maximum ratings (Ta = 25 C) (4) Drain (1) (2) (3) (5) Drain Parameter Symbol Limits Unit 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 10 A D Drain current *1 Pulsed I 40 A DP Continuous I 1.6 A Source current S (Body Diode) *1 Pulsed I 40 A SP *2 Power dissipation P 2.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board. www.rohm.com 2010.07 - Rev.B 1/5 2010 ROHM Co., Ltd. All rights reserved.RP1E100RP Data Sheet Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV = 30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V = 10V, I = 1mA GS (th) DS D - 9.0 12.6 I = 10A, V = 10V D GS Static drain-source on-state * R DS (on) - 12.5 17.5 m I = 5A, V = 4.5V D GS resistance - 14.0 19.6 I = 5A, V = 4.0V D GS * Forward transfer admittance l Y l13 - - S I = 10A, V = 10V fs D DS Input capacitance C - 3600 - pF V = 10V iss DS Output capacitance C - 450 - pF V =0V oss GS Reverse transfer capacitance C - 450 - pF f=1MHz rss Turn-on delay time t - 25 - ns I = 5A, V 15V * d(on) D DD Rise time t * - 60 - ns V = 10V r GS Turn-off delay time t * - 150 - ns R =3.0 d(off) L * Fall time t - 100 - ns R =10 f G * Total gate charge Q - 39 - nC I = 10A, V 15V g D DD Gate-source charge Q * - 8.5 - nC V = 5V R =1.5 gs GS L Gate-drain charge Q * - 13.5 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 10A, V =0V SD s GS *Pulsed www.rohm.com 2/5 2010.07 - Rev.B 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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