Product Information

RQ1C065UNTR

RQ1C065UNTR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

152 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
152 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5393
100 : USD 0.3795
500 : USD 0.3059
1000 : USD 0.2553
3000 : USD 0.2219
9000 : USD 0.2208
24000 : USD 0.2162

5587 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 113
Multiples : 1
113 : USD 0.3265
200 : USD 0.325
500 : USD 0.3016
1000 : USD 0.2956

776 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 132
Multiples : 1
132 : USD 0.7051

2900 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 132
Multiples : 1
132 : USD 0.6962
250 : USD 0.6755
500 : USD 0.662

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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RQ1C065UN Datasheet Nch 20V 6.5A Middle Power MOSFET llOutline TSMT8 V 20V DSS R (Max.) 22m DS(on) I 6.5A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking VB llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS I Continuous drain current 6.5 A D *1 I Pulsed drain current 26 A D,pulse V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RQ1C065UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 6.5A - 16 22 GS D V = 2.5V, I = 6.5A - 19 27 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 3.2A - 24 32 GS D V = 1.5V, I = 1.3A - 29 58 GS D R Gate input resistance f = 1MHz, open drain - 2 - G Forward Transfer *4 Y V = 10V, I = 6.5A 6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (20200.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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