X-On Electronics has gained recognition as a prominent supplier of RQ1E050RPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ1E050RPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ1E050RPTR ROHM

RQ1E050RPTR electronic component of ROHM
RQ1E050RPTR ROHM
RQ1E050RPTR MOSFETs
RQ1E050RPTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RQ1E050RPTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET DRVE PCH MOSFET W4V
Datasheet: RQ1E050RPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability - 1991
Ship by Wed. 07 May to Fri. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
477
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 1.1434
10 : USD 0.937
30 : USD 0.6254
100 : USD 0.4933
500 : USD 0.3925
1000 : USD 0.3705

1991
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 1.12
10 : USD 0.7475
25 : USD 0.6756
100 : USD 0.5126
250 : USD 0.4928
500 : USD 0.4411
1000 : USD 0.374
3000 : USD 0.3641
6000 : USD 0.3575

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ1E050RPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ1E050RPTR and other electronic components in the MOSFETs category and beyond.

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RQ1E050RP Datasheet Pch -30V -5A Small Signal MOSFET llOutline V -30V DSS R (Max.) 31m DS(on) TSMT8 I 5A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 5 A D *1 I Pulsed drain current 20 A DP V Gate - Source voltage 20 V GSS *2 P 1.5 W D Power dissipation *3 P 1.1 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180827 - Rev.002 RQ1E050RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -5.0A - 22 31 GS D Static drain - source *4 R V = -4.5V, I = -2.5A - 32 45 m DS(on) GS D on - state resistance V = -4.0V, I = -2.5A - 36 50 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = -10V, I = -5A 3.1 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180827 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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