X-On Electronics has gained recognition as a prominent supplier of RQ3E130MNTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E130MNTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E130MNTB1 ROHM

Hot RQ3E130MNTB1 electronic component of ROHM
RQ3E130MNTB1 ROHM
RQ3E130MNTB1 MOSFETs
RQ3E130MNTB1  Semiconductors

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Part No. RQ3E130MNTB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N Trench 30V 13A 2.5V @ 1mA 8.1 mΩ @ 13A,10V HSMT8 RoHS
Datasheet: RQ3E130MNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5652 ea
Line Total: USD 0.57 
Availability - 4485
Ship by Tue. 08 Jul to Fri. 11 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4485
Ship by Tue. 08 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5652
10 : USD 0.4998
30 : USD 0.4728
100 : USD 0.2952
500 : USD 0.2457
1000 : USD 0.2384

1430
Ship by Fri. 27 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 1.215
10 : USD 0.966
100 : USD 0.7084
500 : USD 0.6182
1000 : USD 0.5181
3000 : USD 0.4939
6000 : USD 0.4796
9000 : USD 0.4741
24000 : USD 0.4675

   
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RoHS - XON
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We are delighted to provide the RQ3E130MNTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E130MNTB1 and other electronic components in the MOSFETs category and beyond.

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RQ3E130MN Nch 30V 13A Power MOSFET Datasheet l Outline V 30V DSS HSMT8 R at 10V (Max.) 8.1mW DS(on) R at 4.5V (Max.) 11.6mW DS(on) I 13A D P 2.0W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE 4) Halogen Free *2 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TB1 Marking E130MN lAbsolute maximum ratings(T = 25C) ,unless otherwise specified a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current A I 13 D *2 Pulsed drain current I 52 A D,pulse V Gate - Source voltage 20 V GSS *3 Power dissipation 2.0 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/10 Not Recommended for New DesignsData Sheet RQ3E130MN lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 C/W thJA Thermal resistance, junction - ambient R - - - C/W thJC lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 35.6 - mV/C temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = 30V, V = 0V - - 1 mA DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 mA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS (th) DS D V Gate threshold voltage I =1mA (GS)th D - - mV/C -4.3 temperature coefficient T referenced to 25C j V =10V, I =13A - 5.8 8.1 GS D Static drain - source *4 R mW DS(on) on - state resistance V =4.5V, I =13A - 8.3 11.6 GS D Gate input resistannce R f = 1MHz, open drain - 4.2 - W G *4 V =10V, I =13A Transconductance g 10.0 - - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board. (30300.8mm) *4 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/10 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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