X-On Electronics has gained recognition as a prominent supplier of RQ3E130MNTB1 mosfet across the USA, India, Europe, Australia, and various other global locations. RQ3E130MNTB1 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ3E130MNTB1

RQ3E130MNTB1 electronic component of ROHM
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See Product Specifications
Part No.RQ3E130MNTB1
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET N Trench 30V 13A 2.5V @ 1mA 8.1 mΩ @ 13A,10V HSMT8 RoHS
Datasheet: RQ3E130MNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5561 ea
Line Total: USD 0.56

Availability - 5215
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5215 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5561
10 : USD 0.4976
30 : USD 0.4714
100 : USD 0.4391
500 : USD 0.3707
1000 : USD 0.3626

1430 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1178
10 : USD 0.9257
100 : USD 0.7406
500 : USD 0.6463
1000 : USD 0.5416
3000 : USD 0.5164
6000 : USD 0.5164
9000 : USD 0.4968
24000 : USD 0.4956

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We proudly offer the RQ3E130MNTB1 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ3E130MNTB1 MOSFET.

RQ3E130MN Nch 30V 13A Power MOSFET Datasheet l Outline V 30V DSS HSMT8 R at 10V (Max.) 8.1mW DS(on) R at 4.5V (Max.) 11.6mW DS(on) I 13A D P 2.0W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE 4) Halogen Free *2 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TB1 Marking E130MN lAbsolute maximum ratings(T = 25C) ,unless otherwise specified a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current A I 13 D *2 Pulsed drain current I 52 A D,pulse V Gate - Source voltage 20 V GSS *3 Power dissipation 2.0 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/10 Not Recommended for New DesignsData Sheet RQ3E130MN lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 C/W thJA Thermal resistance, junction - ambient R - - - C/W thJC lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 35.6 - mV/C temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = 30V, V = 0V - - 1 mA DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 mA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS (th) DS D V Gate threshold voltage I =1mA (GS)th D - - mV/C -4.3 temperature coefficient T referenced to 25C j V =10V, I =13A - 5.8 8.1 GS D Static drain - source *4 R mW DS(on) on - state resistance V =4.5V, I =13A - 8.3 11.6 GS D Gate input resistannce R f = 1MHz, open drain - 4.2 - W G *4 V =10V, I =13A Transconductance g 10.0 - - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board. (30300.8mm) *4 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/10 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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