RQ6E035TNTR ROHM

RQ6E035TNTR electronic component of ROHM
RQ6E035TNTR ROHM
RQ6E035TNTR MOSFETs
RQ6E035TNTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ6E035TNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E035TNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ6E035TNTR
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 3.5A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
Datasheet: RQ6E035TNTR Datasheet (PDF)
Price (USD)
1: USD 0.9595 ea
Line Total: USD 0.96 
Availability : 5310
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 0.9595
10$ 0.6255
100$ 0.3654
500$ 0.2894
1000$ 0.269
3000$ 0.2349
6000$ 0.219
9000$ 0.2066
24000$ 0.2054

Availability 5310
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9595
10$ 0.6255
100$ 0.3654
500$ 0.2894
1000$ 0.269
3000$ 0.2349
6000$ 0.219
9000$ 0.2066
24000$ 0.2054

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6E035TNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E035TNTR and other electronic components in the MOSFETs category and beyond.

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RQ6E035TN Datasheet Nch 30V 3.5A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 54m DS(on) TSMT6 I 3.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 15 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170621 - Rev.003 RQ6E035TN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 38 54 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 40 56 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 55 77 GS D R Gate resistance f = , open drain - 8.7 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170621 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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