RQ6E050ATTCR ROHM

RQ6E050AT Datasheet Pch -30V -5A Power MOSFET llOutline TSMT6 V -30V DSS R (Max.) 27m DS(on) I 5.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking VB llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS *1 I Continuous drain current 5.0 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 18.2 mJ AS *3 I Avalanche current -5.0 A AS *4 P Power dissipation 1.25 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140415 - Rev.003 RQ6E050AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 100 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -5A - 21 27 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -5A - 29 38 GS D *5 g Transconductance V = -5V, I = -5A 5.0 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20140415 - Rev.003 2014 ROHM Co., Ltd. All rights reserved.