RRE04EA6DFHTR ROHM

Rectifier Diode RRE04EA6DFH Datasheet AEC-Q101 Qualified Serise Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Rectifier Application General rectification D2W TSMD5 Features Structure Cathode Cathode Small mold type (TSMD5) 1) JEDEC : SOT-25T JEITA : - 2) High reliability ROHM : TSMD5 : dot (year week factory) Anode Open Anode Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 600 V R 60Hz half sin wave , Resistive load I Average current 0.4 A o On glass epoxy substrate, 1/2Io per diode 60Hz half sin wave, I Non-repetitive forward surge current 2 A FSM Non-repetitive at T=25C, per diode j Operating junction temperature T - 150 C j T Storage temperature - 55 to 150 C stg Electrical Characteristics (T = 25C, per diode) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =0.2A - 0.97 1.1 V F F V =600V Reverse current I -0.01 1 A R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.06 - Rev.A 1/4Data Sheet RRE04EA6DFH Electrical Characteristic Curves 1 10000 T = 150 C j T = 125 C j 1000 0.1 T = 150 C 100 j T = 75 C j T = 125 C j 10 T = 25 C 0.01 j T = 75 C j T = 25 C 1 j per diode per diode 0.001 0.1 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 10 T = 25 C f = 1MHz f = 1MHz j T = 25 C per diode T = 25 C a a per diode 1 1 I FSM 8.3ms 8.3ms 1cyc. 0.1 0.1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM