RSF010P05TL ROHM

RSF010P05TL electronic component of ROHM
RSF010P05TL ROHM
RSF010P05TL MOSFETs
RSF010P05TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSF010P05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSF010P05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.RSF010P05TL
Manufacturer:ROHM
Category:MOSFETs
Description:MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet:RSF010P05TL Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
469: USD 0.5555 ea
Line Total: USD 260.53 
Availability : 27731
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
469$ 0.5555
738$ 0.3526
968$ 0.2689
1085$ 0.2397
3000$ 0.1947
6000$ 0.1766
9000$ 0.1688
15000$ 0.1672
21000$ 0.1631
30000$ 0.1604
  

Availability557
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4778
50$ 0.3972
150$ 0.2447
500$ 0.2156
3000$ 0.2026
6000$ 0.1948


Availability27731
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 469
Multiples : 1
QtyUnit Price
469$ 0.5555
738$ 0.3526
968$ 0.2689
1085$ 0.2397
3000$ 0.1947
6000$ 0.1766
9000$ 0.1688
15000$ 0.1672
21000$ 0.1631
30000$ 0.1604


Availability2534
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 774
Multiples : 1
QtyUnit Price
774$ 0.3363
896$ 0.2904

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSF010P05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF010P05TL and other electronic components in the MOSFETs category and beyond.

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RSF010P05 Datasheet Pch -45V -1A Small Signal MOSFET llOutline SOT-323T V -45V DSS TUMT3 R (Max.) 460m DS(on) I 1A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Small high power package 3) Low voltage drive(4V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking SU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS I Continuous drain current 1 A D *1 I Pulsed drain current 4 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160602 - Rev.001 RSF010P05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1A - 330 460 GS D Static drain - source *4 R V = -4.5V, I = -0.5A - 450 630 m DS(on) GS D on - state resistance V = -4V, I = -0.5A - 490 690 GS D R Gate resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -1A 1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) 2 *3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160602 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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