X-On Electronics has gained recognition as a prominent supplier of RSR020P05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR020P05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR020P05TL ROHM

RSR020P05TL electronic component of ROHM
RSR020P05TL ROHM
RSR020P05TL MOSFETs
RSR020P05TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSR020P05TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET P-CH 3PIN TSMT TR
Datasheet: RSR020P05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1656 ea
Line Total: USD 0.83 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
553
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 1.2463
10 : USD 0.9912
100 : USD 0.6204
500 : USD 0.5247
1000 : USD 0.396
3000 : USD 0.2937
6000 : USD 0.2805

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSR020P05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR020P05TL and other electronic components in the MOSFETs category and beyond.

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RSR020P05 Datasheet Pch -45V -2.0A Middle Power MOSFET llOutline SOT-346T V -45V DSS SC-96 R (Max.) 190m DS(on) I 2.0A D TSMT3 P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking ZH llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A D,pulse V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.76 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150903 - Rev.001 RSR020P05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 165 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.0A - 130 190 GS D Static drain - source *4 R V = -4.5V, I = -2.0A - 180 260 m DS(on) GS D on - state resistance V = -4.0V, I = -2.0A - 200 280 GS D R Gate input resistance f = 1MHz, open drain - 21 - G Forward Transfer *4 Y V = -10V, I = -2.0A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20150903 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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