SiHG61N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 700 DS J technology R typ. at 25 C ( )V = 10 V 0.041 DS(on) GS Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM) R x Q Q max. (nC) 371 g on g Low input capacitance (C ) Q (nC) 65 iss gs Low switching losses due to reduced Q rr Q (nC) 93 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D APPLICATIONS TO-247AC Telecommunications - Server and telecom power supplies Lighting G - High-intensity lighting (HID) - Light emitting diodes (LEDs) Consumer and computing S S - ATX power supplies D G Industrial N-Channel MOSFET - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switching mode power supplies (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-Free and Halogen-Free SiHG61N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 64 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 41 A C a Pulsed Drain Current I 199 DM Linear Derating Factor 4.2 W/C b Single Pulse Avalanche Energy E 1142 mJ AS Maximum Power Dissipation P 520 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak Temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 9 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 500 A/s, starting T = 25 C. SD D J S17-0296-Rev. B, 27-Feb-17 Document Number: 91789 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHG61N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.24 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 10 mA - 0.81 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 30.5 A - 0.041 0.047 DS(on) GS D Forward Transconductance g V = 30 V, I = 30.5 A - 23 - S fs DS D Dynamic Input Capacitance C -7407- iss V = 0 V, GS Output Capacitance C -3V = 100 V, 51- oss DS f = 1 MHz Reverse Transfer Capacitance C -3- rss pF Effective Output Capacitance, Energy C -233 - a o(er) Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C -939 - o(tr) b Related Total Gate Charge Q - 247 371 g Gate-Source Charge Q -6V = 10 V I = 30.5 A, V = 520 V5- nC gs GS D DS Gate-Drain Charge Q -93- gd Turn-On Delay Time t -59 89 d(on) Rise Time t - 107 161 r = 520 V, I = 30.5 A, V DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -GS g 217326 d(off) Fall Time t -133200 f Gate Input Resistance R f = 1 MHz, open drain 0.5 1 2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 64 S showing the A G integral reverse Pulsed Diode Forward Current I - - 199 SM p - n junction diode S Diode Forward Voltage V T = 25 C, I = 30.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 212 474 ns rr T = 25 C, I = I = 30.5 A, J F S Reverse Recovery Charge Q -2.1 3.8 C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I -18 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S17-0296-Rev. B, 27-Feb-17 Document Number: 91789 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000