RTF016N05TL ROHM

RTF016N05TL electronic component of ROHM
RTF016N05TL ROHM
RTF016N05TL MOSFETs
RTF016N05TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTF016N05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF016N05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTF016N05TL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45 V 1.6A (Ta) 320mW (Ta) Surface Mount TUMT3
Datasheet: RTF016N05TL Datasheet (PDF)
Price (USD)
1: USD 0.665 ea
Line Total: USD 0.66 
Availability : 21997
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 0.665
10$ 0.4113
100$ 0.2415
500$ 0.1793
1000$ 0.1639
3000$ 0.1364
6000$ 0.1298
9000$ 0.121
24000$ 0.1199

Availability 21997
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.665
10$ 0.4113
100$ 0.2415
500$ 0.1793
1000$ 0.1639
3000$ 0.1364
6000$ 0.1298
9000$ 0.121
24000$ 0.1199


Availability 5820
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 751
Multiples : 1
QtyUnit Price
751$ 0.3464
779$ 0.3338
1000$ 0.3231
2500$ 0.3014
5000$ 0.2933


Availability 2045
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 314
Multiples : 1
QtyUnit Price
314$ 0.8294
516$ 0.5044
1000$ 0.3224

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RTF016N05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF016N05TL and other electronic components in the MOSFETs category and beyond.

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RTF016N05 Nch 45V 1.6A Power MOSFET Datasheet lOutline V TUMT3 45V DSS (3) R (Max.) 190mW DS(on) I 1.6A (1) D P 0.8W (2) D lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking PU lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS *1 Continuous drain current I 1.6 A D *2 Pulsed drain current A I 6.4 D,pulse V Gate - Source voltage 12 V GSS *3 P 0.8 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RTF016N05 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 156 C/W thJA *4 Thermal resistance, junction - ambient R - - 391 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 41 - mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 12V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.5 - 1.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -2.5 - mV/C temperature coefficient T referenced to 25C j V =4.5V, I =1.6A - 140 190 GS D V =4.0V, I =1.6A - 150 210 GS D Static drain - source *5 R m W DS(on) on - state resistance V =2.5V, I =1.6A - 200 280 GS D V =4.5V, I =1.6A, T =125C - 230 320 GS D j R Gate input resistannce f = 1MHz, open drain - 10 - W G *5 Transconductance V = 10V, I = 1.6A 1.5 3.5 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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