RTR025N05HZGTL ROHM

RTR025N05HZGTL electronic component of ROHM
RTR025N05HZGTL ROHM
RTR025N05HZGTL MOSFETs
RTR025N05HZGTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTR025N05HZGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTR025N05HZGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTR025N05HZGTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 45V 2.5A SMALL SIGNAL MOSF
Datasheet: RTR025N05HZGTL Datasheet (PDF)
Price (USD)
1: USD 0.7712 ea
Line Total: USD 0.77 
Availability : 6014
  
Ship by Tue. 12 Aug to Thu. 14 Aug
QtyUnit Price
1$ 0.7712
10$ 0.5775
100$ 0.3619
500$ 0.2893
1000$ 0.2673
3000$ 0.2134
6000$ 0.2134
9000$ 0.2046

Availability 6014
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7712
10$ 0.5775
100$ 0.3619
500$ 0.2893
1000$ 0.2673
3000$ 0.2134
6000$ 0.2134
9000$ 0.2046

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTR025N05HZGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTR025N05HZGTL and other electronic components in the MOSFETs category and beyond.

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RTR025N05HZG Datasheet Nch 45V 2.5A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 130m DS(on) TSMT3 I 2.5A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PW llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180326 - Rev.001 RTR025N05HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 95 130 GS D Static drain - source *4 R V = 4.0V, I = 2.5A - 100 140 m DS(on) GS D on - state resistance V = 2.5V, I = 2.5A - 125 175 GS D R Gate resistance f = 1MHz, open drain - 9.2 - G Forward Transfer *4 Y V = 10V, I = 2.5A 2.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180326 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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