RXH070N03 Datasheet Nch 30V 7A Power MOSFET llOutline V 30V DSS SOP8 R (Max.) 28m DS(on) I 7A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RXH070N03 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 7 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RXH070N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 34.15 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.34 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 20 28 GS D Static drain - source *4 R V = 4.5V, I = 7A - 25 35 m DS(on) GS D on - state resistance V = 4.0V, I = 7A - 28 39 GS D R Gate resistance f = 1MHz, open drain - 4.0 - G Forward Transfer *4 Y V = 10V, I = 7A 4.5 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.