Product Information

RVQ040N05FRATR

RVQ040N05FRATR electronic component of ROHM

Datasheet
MOSFET, AEC-Q101, N-CH, 45V, TSMT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6858 ea
Line Total: USD 0.69

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1
5 : USD 0.7073
10 : USD 0.5624
100 : USD 0.4196
500 : USD 0.3569
1000 : USD 0.2838
5000 : USD 0.2522

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

RVQ040N05FRA Nch 45V 4A Power MOSFET Datasheet Outline (6) TSMT6 V 45V DSS (5) (4) R (Max.) 53m DS(on) (1) I 4A D (2) P 1.25W (3) D Features Inner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 5) AEC-Q101 Qualified 2 BODY DIODE Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking QG Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS *1 Continuous drain current I 4.0 A D *2 Pulsed drain current A I 16 D,pulse V Gate - Source voltage 21 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 1/11Data Sheet RVQ040N05FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 100 C/W thJA *4 Thermal resistance, junction - ambient R - - 208 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 42 - mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 21V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 4.2 - mV/C temperature coefficient T referenced to 25C j V =10V, I =4A - 38 53 GS D V =4.5V, I =4A - 47 66 GS D Static drain - source *5 R m DS(on) on - state resistance V =4V, I =4A - 53 74 GS D V =10V, I =4A, T =125C - 70 100 GS D j R Gate input resistannce f = 1MHz, open drain - 7 - G *5 V = 10V, I = 4A Transconductance 3 6 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) www.rohm.com 2016.06 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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