Product Information

RW1C025ZPT2CR

RW1C025ZPT2CR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET Trans MOSFET P-CH 20V 2.5A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 8000
Multiples : 8000
8000 : USD 0.1382
16000 : USD 0.1293
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.561
10 : USD 0.4352
100 : USD 0.2962
500 : USD 0.2222
1000 : USD 0.1667
2000 : USD 0.1527
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.553
10 : USD 0.4708
100 : USD 0.3418
500 : USD 0.2566
1000 : USD 0.2012
2500 : USD 0.1771
5000 : USD 0.1671
8000 : USD 0.1585
N/A

Obsolete
0 - WHS 4

MOQ : 90
Multiples : 1
90 : USD 0.443
100 : USD 0.4038
200 : USD 0.3762
500 : USD 0.2539
1000 : USD 0.2437
N/A

Obsolete
0 - WHS 5

MOQ : 93
Multiples : 1
93 : USD 0.4161
100 : USD 0.3828
200 : USD 0.3621
500 : USD 0.2196
1000 : USD 0.2107
2000 : USD 0.2049
N/A

Obsolete
0 - WHS 6

MOQ : 182
Multiples : 182
182 : USD 0.0831
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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Subcategory
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RW1C025ZP Datasheet Pch -20V -2.5A Small Signal MOSFET llOutline SOT-563T V -20V DSS WEMT6 R (Max.) 65m DS(on) I 2.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive(1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2CR Marking ZG llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 10 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160825 - Rev.001 Not Recommended for New Designs RW1C025ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 292 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 48 65 GS D V = -2.5V, I = -1.2A - 65 90 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 90 135 GS D V = -1.5V, I = -0.5A - 120 240 GS D Gate resistance R f = 1MHz, open drain - 19.3 - G Forward Transfer *4 Y V = -10V, I = -2.5A 2.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160825 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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