Product Information

RW1A020ZPT2R

RW1A020ZPT2R electronic component of ROHM

Datasheet
MOSFET SW MOSFET MID PWR P-CH 12V .7A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6118 ea
Line Total: USD 0.61

7759 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7759 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.5267
100 : USD 0.3979
500 : USD 0.3162
1000 : USD 0.2564
2500 : USD 0.2358
8000 : USD 0.2139
24000 : USD 0.2116
48000 : USD 0.207

5852 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 247
Multiples : 1
247 : USD 0.4309
250 : USD 0.4137
500 : USD 0.3987
1000 : USD 0.3857
2500 : USD 0.3743
5000 : USD 0.3643

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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RW1A020ZP Datasheet Pch -12V -2A Small Signal MOSFET llOutline SOT-563T V -12V DSS WEMT6 R (Max.) 105m DS(on) I 2A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) High power package 3) Low voltage drive(1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking ZE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.001 Not Recommended for New Designs RW1A020ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 313 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2A - 75 105 GS D V = -2.5V, I = -1A - 105 145 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1A - 150 225 GS D V = -1.5V, I = -0.4A - 200 400 GS D Gate resistance R f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -6V, I = -2A 2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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