Data Sheet 4V Drive Pch MOSFET RW1E025RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(4V) Abbreviated symbol : UT Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code T2CR 2 Basic ordering unit (pieces) 8000 RW1E025RP 1 (1) Drain Absolute maximum ratings (Ta = 25 C) (2) Drain (3) Gate (1) (2) (3) Parameter Symbol Limits Unit (4) Source (5) Drain 1 ESD PROTECTION DIODE Drain-source voltage V 30 V DSS (6) Drain 2 BODY DIODE Gate-source voltage V 20 V GSS Continuous I 2.5 A D Drain current *1 Pulsed I 10 A DP Continuous I 0.5 A Source current S (Body Diode) *1*1 Pulsed I 10 A SP *2*2 Power dissipation P 0.7 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 179 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6Data Sheet RW1E025RP Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV = 30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V = 10V, I = 1mA GS (th) DS D -55 75 I = 2.5A, V = 10V D GS Static drain-source on-state * R DS (on) - 85 115 m I = 1.2A, V = 4.5V D GS resistance - 95 125 I = 1.2A, V = 4V D GS * Forward transfer admittance l Y l 1.5 - - S I = 2.5A, V = 10V fs D DS Input capacitance C - 480 - pF V = 10V iss DS Output capacitance C - 70 - pF V =0V oss GS Reverse transfer capacitance C - 70 - pF f=1MHz rss Turn-on delay time t -7 - nsI = 1.2A, V 15V *********** d(on) D DD Rise time t - 12 - ns V = 10V ************** r GS Turn-off delay time t - 50 - ns R =12.5 **************** d(off) L Fall time t **************** - 22 - ns R =10 f G Total gate charge Q ** - 5.2 - nC I = 2.5A g D Gate-source charge Q - 1.6 - nC V 15V ** gs DD Gate-drain charge Q - 1.6 - nC V = 5V ********** gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 2.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A