Product Information

SCS304AHGC9

SCS304AHGC9 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 650V;4A;34W SiC SBD TO-220ACP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0847 ea
Line Total: USD 3.08

711 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
695 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2.1275
10 : USD 1.8745
100 : USD 1.702
500 : USD 1.633
1000 : USD 1.5525
5000 : USD 1.495

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Hts Code
LoadingGif

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SCS304AH Datasheet SiC Schottky Barrier Diode lOutline TO-220ACP (1) V 650V R I 4A F Q 11nC C (3) (2) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode 4) High surge current capability (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planar type Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS304AH lAbsolute maximum ratings (T = 25C) j Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 650 V RM V Reverse voltage (DC) 650 V R Continuous forward current (T = 140C) I 4 A c F PW=10ms sinusoidal, T =25C 27 A j Surge non- PW=10ms sinusoidal, T =150C I repetitive forward 22 A j FSM current PW=10 ms square, T =25C 100 A j 1 * Repetitive peak forward current I 20 A FRM 2 1PW 10ms, T =25C 3.6 j A s 2 2 i t value i dt 2 1PW 10ms, T =150C 2.4 j A s 2 * Total power disspation P 34 W D T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c www.rohm.com TSQ50221-SCS304AH 2019 ROHM Co., Ltd. All rights reserved. 1/5 18.Nov.2019-Rev.002 TSZ2211114001Datasheet SCS304AH lElectrical characteristics (T = 25C) j Values Parameter Symbol Conditions Unit Min. Typ. Max. DC blocking voltage V I =20mA 650 - - V DC R I =4A,T =25C - 1.35 1.50 V F j Forward voltage V I =4A,T =150C - 1.44 1.71 V F F j I =4A,T =175C - 1.50 - V F j V =650V,T =25C - 0.012 20.0 mA R j I V =650V,T =150C Reverse current - 0.8 80 mA R R j V =650V,T =175C - 2.4 - mA R j V =1V,f=1MHz - 200 - pF R Total capacitance C V =650V,f=1MHz - 18 - pF R Total capacitive charge Q V =400V,di/dt=350A/ms - 11 - nC C R t Switching time V =400V,di/dt=350A/ms - 14 - ns C R Non-repetetive E L=1mH - 48 - mJ ava Avaranche Energy lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance - - 3.0 4.4 K/W th(j-c) lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -2 -4 R C 3.9110 1.0110 th1 th1 -1 -4 R C 3.7610 K/W 4.0210 Ws/K th2 th2 0 -3 R 2.5410 C 1.1910 th3 th3 R R T th,n T th1 j c PD C C C th1 th2 th,n T a www.rohm.com TSQ50221-SCS304AH 2019 ROHM Co., Ltd. All rights reserved. 2/5 18.Nov.2019-Rev.002 TSZ2211115001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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