Product Information

SH8KA7GZETB

SH8KA7GZETB electronic component of ROHM

Datasheet
MOSFET 30V NCH+NCH POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9221 ea
Line Total: USD 1.92

2442 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2442 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.9221
10 : USD 1.6373
100 : USD 1.3408
500 : USD 1.1592
1000 : USD 1.0038
2500 : USD 0.9943
5000 : USD 0.9872
10000 : USD 0.9812

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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SH8KA7 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 9.3m DS(on) SOP8 I 15A D P 4.6W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Motor Drive Quantity (pcs) 2500 Taping code TB Marking SH8KA7 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 15 A D *2 I Pulsed drain current 30 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 13.5 A AS *3 E Avalanche energy, single pulse 65.1 mJ AS *1 P 4.6 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. SH8KA7 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 16V, V = 0V - - 100 nA GSS GS DS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 15.0A - 7.1 9.3 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 13.5A - 8.3 10.9 GS D Gate resistance R f = 1MHz, open drain - 1.5 - G Forward Transfer *6 Y V = 5V, I = 13.5A 17.5 - - S fs DS D Admittance *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.5mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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