RSY160P05 Transistors 4V Drive Pch MOSFET RSY160P05 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TCPT (2) z Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Same land pattern as CPT3 (D-PAK). (1) (3) z Application Switching z Packaging specifications z Equivalent circuit Package Taping 1 Type Code TL 2500 Basic ordering unit (pieces) RSY160P05 2 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 45 V Gate-source voltage V 20 V GSS Continuous ID 16 A Drain current 1 Pulsed IDP 32 A Continuous I 16 A Source current S 1 (Body diode) Pulsed ISP 32 A 2 Total power dissipation PD 20 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Tc=25C z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-c) 6.25 C / W Tc=25C 1/5 RSY160P05 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 45 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 45V, VGS=0V Gate threshold voltage V 1.0 2.5 V V = 10V, I = 1mA GS (th) DS D 35 50 m ID= 16A, VGS= 10V Static drain-source on-state RDS (on) 45 63 m ID= 8A, VGS= 4.5V resistance 50 70 m I = 8A, V = 4.0V D GS Forward transfer admittance Yfs 8.5 SVDS= 10V, ID= 8A Input capacitance Ciss 2150 pF VDS= 10V Output capacitance Coss 250 pF VGS=0V Reverse transfer capacitance Crss 150 pF f=1MHz td (on) Turn-on delay time 13 ns ID= 10A VDD 25V tr Rise time 30 ns VGS= 10V td (off) Turn-off delay time 90 ns RL=2.5 tf Fall time 105 ns RG=10 Total gate charge Qg 17.0 25.5 nC VDD 25V ID= 10A Gate-source charge Qgs 5.2 nC VGS= 5V RL=2.5 RG=10 Gate-drain charge Qgd5.5 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage V 1.2 V I = 16A, V =0V SD S GS Pulsed 2/5