UMN11NTN ROHM

UMN11N Switching Diode (High speed switching) Data sheet Outline V 80 V RM I 300 mA FM I 100 mA o I 4000 mA FSM Features Inner Circuit High reliability High Speed switching Application Packaging Specifications High speed switching Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Structure Epitaxial planar Taping Code TN Marking N11 (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit V Reverse voltage - 80 V R V Repetitive peak reverse voltage - 80 V RM I Average rectified forward current - 100 mA o Forward current I - 300 mA FM I Peak forward surge current t=1s 4000 mA FSM P Power dissipation * - 200 mW D T Junction temperature - 150 j Storage temperature T - -55 150 stg *4 elements total (T = 25C) Characteristics a Value per element Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =100mA - - 1.2 V F F I Reverse current V =70V - - 0.1 A R R C Capacitance between terminals V =6.0V f=1.0MHz - - 3.5 pF t R Reverse recovery time trr V =6.0V I =5.0mA R =50 - - 4.0 ns R F L Cautionstatic electricity www.rohm.com 1/4 2018 ROHM Co., Ltd. All rights reserved. 2018/06/06 Rev.004UMN11N Data sheet Characteristic Curves www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 2018/06/06 Rev.004