CMPD4150 TR Central Semiconductor

CMPD4150 www.centralsemi.com SURFACE MOUNT HIGH CURRENT, HIGH SPEED DESCRIPTION: SILICON SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. MARKING CODE: ABA SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 50 V R Peak Repetitive Reverse Voltage V 50 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 250 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 100 nA R R V I=1.0mA 0.54 0.62 V F F V I=10mA 0.66 0.74 V F F V I=50mA 0.76 0.86 V F F V I=100mA 0.82 0.92 V F F V I=200mA 0.87 1.0 V F F C V =0, f=1.0MHz 4.0 pF T R t I =I =10mA, R =100, Rec. to 1.0mA 4.0 ns rr R F L R6 (25-January 2010)CMPD4150 SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: ABA R6 (25-January 2010) www.centralsemi.com