UMT1N FHA Datasheet General Purpose Transistor (Isolated Dual Transistors) AEC-Q101 Qualified llOutline Parameter Tr1 and Tr2 SOT-363 V -50V CEO SC-88 I -150mA C UMT6 llFeatures llInner circuit 1)Two 2SA1037AK chips in a UMT package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMT1N FHA 2021 TN 180 8 3000 T1 (UMT6) www.rohm.com 1/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. UMT1N FHA Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I Collector current -150 mA C total *1 P 150 mW D Power dissipation P element 120 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E I Collector cut-off current V = -60V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.