UMZ8.2TFHT106

UMZ8.2TFH Diodes AEC-Q101 Qualified Zener diode UMZ8.2TFH z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) Voltage regulation 1.3 (Cathode common twin type) 2.0 0.2 0.3 0.1 0.65 Each lead has same dimension 0.15 0. 05 z Features (3) 1) Small mold type. (UMD3) 2) High reliability. 0.8MIN UMD3 0 0.1 (2 ) (1) z Construction 0.6 5 z Structure 0.65 0.7 0.1 1.3 0.1 Silicon epitaxial planar 0.9 0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) z Taping specification (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation (*1) Pm200W Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Total of 2 elements z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 7.76 - 8.64 V I =5mA Z Z Reverse current I - - 0.50 A V =5V R R Z Operating resistance -- 30 I =5mA Z Z Z I =0.5mA Rising operating resistance -- 60 Zk Z Rev.A 1/2 1. 250 .1 2 .10 .1 0. 1Min 0.9MIN. 2.40.1 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6UMZ8.2TFH Diodes z Electrical characteristic curves (Ta=25C) Ta=125 10 Ta=150 1000 100 f=1MHz Ta=25 Ta=75 100 1 Ta=75 10 Ta=-25 Ta=125 1 0.1 Ta=25 10 Ta=150 0.1 0.01 0.01 Ta=-25 0.001 0.001 0.0001 1 77.5 88.5 99.5 10 0123 45 01 23 4 5 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 8.5 30 1 Ta=25 Ta=25 Ta=25 0.9 29 IZ=5mA f=1MHz VR=5.0V 8.4 28 n=30pcs 0.8 VR=0V n=30pcs n=10pcs 27 0.7 8.3 26 0.6 25 0.5 8.2 24 0.4 23 AVE:24.75pF 0.3 8.1 AVE:0.074nA 22 0.2 AVE:8.206V 21 0.1 8 20 0 Vz DISRESION MAP IR DISRESION MAP Ct DISRESION MAP 1000 1000 Rth(j-a) Rth(j-c) 100 100 Mounted on epoxy board IM=10mA IF=100mA 10 10 time 1ms 300us 1 1 0.001 0.1 10 1000 0.1 1 10 ZENER CURRENT(mA) TIME:t(s) Zz-Iz CHARACTERISTICS Rth-t CHARACTERISTICS Rev.A 2/2 ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() ZENER VOLTAGE:Vz() TRANSIENT REVERSE CURRENT:IR(nA) REVERSE CURRENT:IR (nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)