US5U35TR ROHM

US5U35TR electronic component of ROHM
US5U35TR ROHM
US5U35TR MOSFETs
US5U35TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of US5U35TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US5U35TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. US5U35TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET P Chan-45V-0.7A 4V Drive
Datasheet: US5U35TR Datasheet (PDF)
Price (USD)
199: USD 1.2726 ea
Line Total: USD 253.25 
Availability : 0
  
QtyUnit Price
199$ 1.2726
315$ 0.8014
500$ 0.5254
1000$ 0.504

Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3218
5$ 0.3159
50$ 0.2925
250$ 0.2516
1000$ 0.227
2500$ 0.2223


Availability 0
Ship by Mon. 27 Oct to Wed. 29 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2849
6000$ 0.2717
9000$ 0.2607


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 138
Multiples : 1
QtyUnit Price
138$ 1.8266


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 199
Multiples : 1
QtyUnit Price
199$ 1.2726
315$ 0.8014
500$ 0.5254
1000$ 0.504


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 199
Multiples : 1
QtyUnit Price
199$ 1.2726
315$ 0.8014
500$ 0.5254
1000$ 0.504

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US5U35TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US5U35TR and other electronic components in the MOSFETs category and beyond.

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US5U35 Datasheet 4V Drive Pch+SBD MOSFET llOutline SOT-353T V -45V DSS SC-113CA R (Max.) 800m DS(on) TUMT5 I 0.7A D P 1.0W D llInner circuit llFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Built-in Low V schottky barrier diode F 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Quantity (pcs) 3000 Taping code TR Marking U35 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS V Gate - Source voltage 20 V GSS Continuous drain current I 0.7 A D *1 I Pulsed drain current 2.8 A DP Continuous source current (body diode) I -0.4 A S *1 I Pulsed source current (body diode) -2.8 A SP *3 P Power dissipation 0.7 W/element D Junction temperature T 150 j www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 US5U35 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 45 V RM V Reverse voltage 40 V R I Forward current 100 mA F *2 I Forward current surge peak 1.0 A FSM *3 P Power dissipation 0.5 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.0 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS D V = -10V, I = -0.7A - 600 800 GS D Static drain - source *4 R V = -4.5V, I = -0.7A - 900 1300 m DS(on) GS D on - state resistance V = -4.0V, I = -0.35A - 1000 1400 GS D Forward Transfer *4 Y V = -10V, I = -0.7A 0.6 - - S fs DS D Admittance www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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